Excited-states of hydrogenic-like impurities in InGaN-GaN spherical QD: Electric field effect
Identifieur interne : 000D26 ( Main/Repository ); précédent : 000D25; suivant : 000D27Excited-states of hydrogenic-like impurities in InGaN-GaN spherical QD: Electric field effect
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Abstract
By means of a traditional Ritz variational method within the effective-mass and single parabolic band approximations, the excited-states energy with and without the existence of the impurity is performed. Externally applied electric field and system radius effects are considered in wurtzite (In,Ga)N-GaN spherical quantum dot with finite potential barrier. The normalized binding energy is also reported. Compared to the previous theoretical findings, a good agreement is shown.
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<author><name sortKey="Jorio, Anouar" uniqKey="Jorio A">Anouar Jorio</name>
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<term>Effective mass</term>
<term>Electric field effects</term>
<term>Excited states</term>
<term>Gallium nitride</term>
<term>H-like ions</term>
<term>Impurity states</term>
<term>Indium nitride</term>
<term>Parabolic approximation</term>
<term>Potential barrier</term>
<term>Quantum dots</term>
<term>Spherical particle</term>
<term>Variational methods</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etat excité</term>
<term>Etat impureté</term>
<term>Effet champ électrique</term>
<term>Méthode variationnelle</term>
<term>Masse effective</term>
<term>Approximation parabolique</term>
<term>Barrière potentiel</term>
<term>Energie liaison</term>
<term>Ion hydrogénoïde</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Particule sphérique</term>
<term>Point quantique</term>
<term>InGaN</term>
<term>GaN</term>
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<front><div type="abstract" xml:lang="en">By means of a traditional Ritz variational method within the effective-mass and single parabolic band approximations, the excited-states energy with and without the existence of the impurity is performed. Externally applied electric field and system radius effects are considered in wurtzite (In,Ga)N-GaN spherical quantum dot with finite potential barrier. The normalized binding energy is also reported. Compared to the previous theoretical findings, a good agreement is shown.</div>
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<fC01 i1="01" l="ENG"><s0>By means of a traditional Ritz variational method within the effective-mass and single parabolic band approximations, the excited-states energy with and without the existence of the impurity is performed. Externally applied electric field and system radius effects are considered in wurtzite (In,Ga)N-GaN spherical quantum dot with finite potential barrier. The normalized binding energy is also reported. Compared to the previous theoretical findings, a good agreement is shown.</s0>
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<s5>07</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Binding energy</s0>
<s5>11</s5>
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<s5>15</s5>
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<s5>17</s5>
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<s5>17</s5>
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<fC03 i1="11" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>17</s5>
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<fC03 i1="12" i2="X" l="FRE"><s0>Particule sphérique</s0>
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