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Excited-states of hydrogenic-like impurities in InGaN-GaN spherical QD: Electric field effect

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Excited-states of hydrogenic-like impurities in InGaN-GaN spherical QD: Electric field effect

Auteurs : RBID : Pascal:14-0015078

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Abstract

By means of a traditional Ritz variational method within the effective-mass and single parabolic band approximations, the excited-states energy with and without the existence of the impurity is performed. Externally applied electric field and system radius effects are considered in wurtzite (In,Ga)N-GaN spherical quantum dot with finite potential barrier. The normalized binding energy is also reported. Compared to the previous theoretical findings, a good agreement is shown.

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Pascal:14-0015078

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<div type="abstract" xml:lang="en">By means of a traditional Ritz variational method within the effective-mass and single parabolic band approximations, the excited-states energy with and without the existence of the impurity is performed. Externally applied electric field and system radius effects are considered in wurtzite (In,Ga)N-GaN spherical quantum dot with finite potential barrier. The normalized binding energy is also reported. Compared to the previous theoretical findings, a good agreement is shown.</div>
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